Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• Chow David

  Hughes Research Laboratories

• BOLOGNESI Colombo

  School of Engineering Science

• DVORAK Martin

  School of Engineering Science

• Dvorak M

  Simon Fraser Univ. Bc Can

• Bolognesi C

  Simon Fraser Univ. Bc Can

関連論文

• Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors : the Role of Channel Quantization
• Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs
• Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs
• Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations

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