Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors : Review Paper

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概要

• 論文の詳細を見る

• We study the performance of staggered lineup NpN InP/GaAsSb/InP abrupt double heterojunction bipolar transistors (DHBTs) intended for ultrahigh speed applications. With a peak f_T of 305 GHz (and f_<MAX> = 300 GHz), InP/GaAsSb/InP DHBTs are currently the fastest bipolar transistors ever implemented, and as such may challenge sub-100nm gate InP HEMTs for > 40 Gb/s applications: previously published criteria suggest current device performance should be suitable for 80-1OO Gb/s OEICs. InP/GaAsSb/InP DHBTs feature high breakdown voltages and low offset and knee voltages, and extremely high current drive levels enabled by the lack of collector current blocking at the staggered base/collector junction. InP/GaAsSb/InP DHBTs also feature important manufacturability advantages because the structure is entirely made up of uniform composition binary and ternary alloy layers.

• 社団法人応用物理学会の論文
• 2002-02-28

著者

• BOLOGNESI Colombo

  Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, School of Engineering Scie

• DVORAK Martin

  Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, School of Engineering Scie

• Bolognesi Colombo

  Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit

• Dvorak Martin

  Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit

• Watkins Simon

  Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit

• MATINE Noureddine

  Compound Semiconductor Device Laboratory (CSDL) Simon Fraser University

• PITTS Oliver

  Compound Semiconductor Device Laboratory (CSDL), School of Engineering Science, Simon Fraser Univers

• Pitts Oliver

  Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit

• Matine Noureddine

  Compound Semiconductor Device Laboratory (csdl) School Of Engineering Science Simon Fraser Universit

関連論文

• Impact Ionization Effects on the Microwave Performance of InAs Channel Heterostructure Field-Effect Transistors : the Role of Channel Quantization
• Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs
• Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations
• Ultrahigh Performance Staggered Lineup ("Type-II") InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors : Review Paper

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