Voltage Contrast Defect Inspection of Contacts and Vias for Deep Quarter Micron Devices

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概要

• 論文の詳細を見る

• Electron beam induced voltage contrast of vias and contacts was investigated for voltage contrast defect inspection. The investigation was carried out on the basis of signal intensity analysis of the voltage contrast image in relation to wafer bias and charge density of the incident electron beam. It was determined that voltage contrast is dependent on the balance between the surface potential of the oxide surface due to charge-up and the surface potential of vias and contacts. By adjusting the parameters of the charge density and the wafer bias, the optimum conditions can be obtained. Using this technique, the inspection of a 0.25 μm logic and 0.18 μm dynamic random access memory (DRAM) production wafer was carried out. The potential for inspecting electric anomalous failures of a 0.18-μm-design-rule device, which are difficult to detect by conventional optical inspection tools, was confirmed.

• 社団法人応用物理学会の論文
• 1999-12-30

著者

• Miyoshi Motosuke

  Toshiba Corp. Integrated Circuit Advanced Process Engineering Department

• Yamazaki Yuichiro

  Toshiba Corp. Integrated Circuit Advanced Process Engineering Department

• HAYASHI Hiroyuki

  Toshiba Corp., Integrated Circuit Advanced Process Engineering Department

• Hayashi Hiroyuki

  Toshiba Corp. Integrated Circuit Advanced Process Engineering Department

関連論文

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• Effect of the Electron-Irradiation-Induced-Contamination of the Etching Process of a Photoresist
• Voltage Contrast Defect Inspection of Contacts and Vias for Deep Quarter Micron Devices
• A New Autofocus Using Image Processing Techniques in Critical Dimension Measurement SEM(Special Issue on Test and Diagnosis of VLSI)

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