Measurement of Piezoelectric Constant of ZnO Thin Film on Si Microstructure

概要

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The piezoelectric constant of a zinc oxide thin film on a silicon fixed beam was evaluated by a new method using a metal bar (Davies' bar) and a laser interferometer. The beam was fabricated by silicon micromachining techniques, and the ZnO film was deposited on it by rf sputtering. The film attached to the end of the Davies' bar was accelerated by striking the other end of the bar with a projectile, and the piezoelectric constant of the film was catculated from the strain and the electric charge. A reasonable value of e_<31>=0.43 C/m^2 was obtained for the test specimen.
社団法人応用物理学会の論文
1995-09-30