Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)

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概要

• 論文の詳細を見る

• Several schemes have been proposed for proximity effect correction (PEC) in e-beam lithography systems: biasing, dose control and GHOST. Typically, the correction is applied to the pattern data, a process that is computationally demanding and expensive in terms of data handling. A process which is independent of the pattern information, and could be implemented in the tool hardware, would be an attractive alternative. In this paper we present such a solution to the proximity effect correction problem, for use in SCALPEL (SCattering with Angular Limitation in Projection Electron Beam Lithography).

• 社団法人応用物理学会の論文
• 1995-12-30

著者

• Berger S

  Bell Lab. Nj

• Watson G.

  At&t Bell Laboratories

• Watson G

  At&t Bell Lab. New Jersey Usa

• Miller Peter

  Department Of Physics University Of Illinois At Urbana-champaign

• LIDDLE J.

  AT&T Bell Laboratories

• WATSON G.

  AT&T Bell Laboratories

• BERGER Steven

  AT&T Bell Laboratories

• Liddle J.

  Lucent Technologies

関連論文

• From Relaxed GeSi Buffers to Field Effect Transistors : Current Status and Future Prospects
• Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)
• Mechanical Modeling of Projection Electron-Beam Lithography Masks
• The SCattering with Angular Limitation in Projection Electron-Beam Lithography (SCALPEL) System

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