From Relaxed GeSi Buffers to Field Effect Transistors : Current Status and Future Prospects

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概要

• 論文の詳細を見る

• We review the current status of relaxed GeSi buffer layers, high-mobility two-dimensional electron and hole gases fabricated on top of these layers, and GeSi-based field effect transistors (FETs). Recent progress in these fields is emphasized. A brief summary is then given for a variety of GeSi-based FET fabrications to date. Finally, the future prospects of GeSi-based FETs to be integrated into Si VLSI production is discussed.

• 社団法人応用物理学会の論文
• 1994-04-30

著者

• Watson G.

  At&t Bell Laboratories

• Watson G

  At&t Bell Lab. New Jersey Usa

• Silverman Paul

  At & T Bell Laboratories

• Monroe Donald

  At & T Bell Laboratories

• XIE Ya-Hong

  AT & T Bell Laboratories

• FITZGERALD Eugene

  AT & T Bell Laboratories

• MONROE Donald

  AT & T Bell Laboratories

• WATSON G.Patrick

  AT & T Bell Laboratories

• SILVERMAN Paul

  AT & T Bell Laboratories

• Xie Ya-hong

  At & T Bell Laboratories

• Fitzgerald Eugene

  At & T Bell Laboratories

関連論文

• From Relaxed GeSi Buffers to Field Effect Transistors : Current Status and Future Prospects
• Proximity Effect Correction in Projection Electron Beam Lithography (Scattering with Angular Limitation Projection Electron-Beam Lithography)
• The SCattering with Angular Limitation in Projection Electron-Beam Lithography (SCALPEL) System

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