Mechanical Modeling of Projection Electron-Beam Lithography Masks

概要

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The production of microchips with circuit features in the sub-0.13 μm regime will require an advanced lithography technique such as SCattering with Angular Limitation Projection Electron Lithography (SCALPEL). The mask used in this technique is subject to intrinsic and extrinsic loads during fabrication, mounting, and exposure, giving rise to mechanical distortions which lead to pattern placement errors. In order to develop a low distortion mask, finite element models have been created to identify sources of distortion and quantify the resulting errors. The models are then used as predictive tools to optimize the design of the mask so that distortions do not exceed the error budget. The focus of this study was to investigate the mask membrane distortions induced during the fabrication process and pattern transfer for a preliminary test case of a SCALPEL mask. More specifically, out-of-plane and in-plane distortions were calculated and the sensitivity of this response to variations in mask design parameters was determined.
社団法人応用物理学会の論文
1997-12-30