Dissolution Study of a Novolak-Based Photoresist Based on a Developer Diffusion Model

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概要

• 論文の詳細を見る

• Dissolution characteristics of a positive chemically amplified photoresist, AZ-PF5l4 from Hoechst Celanese,have been studied. Development rate monitor data for different developer concentrations are analyzed. The experimental dissolution rates of the X-ray-exposed photoresist are examined in view of the dissolution model proposed earlier by Reiser. Parameters of Reiser's model associated with the diffusion of an aqueous base through a thin penetration layer and solubility of a phenolate complex in an aqueous base solution are derived for different X-ray exposure conditions. Reiser's dissolution model was used to simulate the developed photoresist pattern profile. An example of 0.25 μm pattern development simulation using a dose-dependent coefficient for diffusion of a developer base into polymer is demonstrated.

• 社団法人応用物理学会の論文
• 1994-12-30

著者

• CERRINA Franco

  Center for X-ray Lithography University of Wisconsin-Madison

• Taylor J

  Univ. Wisconsin‐madison Wi Usa

• Cerrina Franco

  Center For Nanotechnology University Of Wisconsin-madison

• Taylor James

  Center For X-ray Lithography University Of Wisconsin

• KRASNOPEROVA Azalia

  Center for X-ray Lithography, University of Wisconsin-Madison

• BELL Todd

  Department of Chemical Engineering, University of Wisconsin-Madison

• RHYNER Steven

  Center for X-ray Lithography, University of Wisconsin-Madison

• DEPABLO Juan

  Department of Chemical Engineering, University of Wisconsin-Madison

• Bell Todd

  Department Of Chemical Engineering University Of Wisconsin-madison

• Depablo Juan

  Department Of Chemical Engineering University Of Wisconsin-madison

• Rhyner Steven

  Center For X-ray Lithography University Of Wisconsin-madison

• Krasnoperova A

  Ibm Microelectronics Ny

• Taylor James

  Center for Nanotechnology, University of Wisconsin-Madison, Wisconsin, 3731 Schneider Drive, Stoughton, WI 53589-3097, USA

関連論文

• Mechanical Response of X-Ray Masks
• Linear-Fresnel-Zone-Plate-Based Two-State Alignment Method for Sub-0.25 μm X-Ray Lithography System
• Performance of the Modified Suss XRS 200 / 2M X-Ray Stepper at CXrL
• Evaluation of a Solid State Detector for X-Ray Lithography Dosimetry
• Dissolution Study of a Novolak-Based Photoresist Based on a Developer Diffusion Model
• Modeling Clear Phase-Mask Materials for Sub-50 nm X-Ray Application

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