Determination of Integrated Reflecting Power of Silicon Crystal by Means of Mossbauer γ-Ray Diffraction

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概要

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• Integrated reflecting powers of the flat surfaces parallel to (111) planes of a Si crystal polished mechanically only and etched chemically further were determined by using 14.4keV Mossbauer γ-rays from Co^<57> and its resonant absorber ahead of a position sensitive detector. The experimental values of the integrated reflecting powers of the crystal with chemically etched surface were close to those calculated on the theoretical basis of the model of absorbing perfect crystal.

• 社団法人応用物理学会の論文
• 1983-01-20

著者

• Kashiwase Yasuji

  Department of physics, College of General Education, Nagoya University

• Minoura Masayuki

  Department of physics, College of General Education, Nagoya University

• Minoura Masayuki

  Department Of Physics College Of General Education Nagoya University

• Kashiwase Yasuji

  Department Of General Education Nagoya University

関連論文

• Dynamical Diffraction Effect on Fluorescent X-Ray Emission in Absorbing Perfect Germanium Crystals in the Laue Geometry
• Dynamical Diffraction Effect on X-Ray Inelastic Scattering in Absorbing Perfect Germanium Crystal in the Laue Geometry
• Diffraction Pattern Caused by X-Ray Thermal Diffuse Scattering in Absorbing Perfect Crystal
• Observation of Anomalous Transmission of Thermally Scattered X-Rays in a Germanium Crystal
• Application of a Position-Sensitive Proportional Detector to Mossbauer γ-Ray Diffraction
• Determination of Integrated Reflecting Power of Silicon Crystal by Means of Mossbauer γ-Ray Diffraction
• Anomalous Transnission of Themally Scatterd X-Rays in Germanium Crystal
• Attenuation of Thermal Neutrons by Phonons in a Single Crystal. I
• Thermal Diffuse Scattering of X-Rays by Potassium Bromide Crystals
• Diffraction of Thermally Scattered X-Rays in Mosaic Crystal

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