Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors
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概要
- 論文の詳細を見る
Inverted structure (Al, Ga)As/GaAs modulation doped Schottky barrier FETs were fabricated. The structures from which the FETs were prepared were grown by molecular beam epitaxy. These FETs are easier to fabricate than normal MD FETs, because the rectifying metal contact is made to GaAs rather than to (Al, Ga)As. Having the GaAs on top of the (Al, Ga)As also makes these devices less susceptible to degradation. Although the device structure is not yet fully optimized, normalized transconductances of 70 mS/mm and excellent saturation characteristics have been obtained.
- 社団法人応用物理学会の論文
- 1982-04-20
著者
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Thorne R.e.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Kopp W.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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FISCHER R.
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois
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SU S.L.
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois
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DRUMMOND T.J.
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois
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MORKO〓 H.
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois
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Su S.l.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Drummond T.j.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Morko〓 H.
Department Of Electrical Engineeing And Coordinated Science Laboratory University Of Illinois
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Morko〓 H.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Fischer R.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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