Mobility Enhancement in Inverted Al_xGa_<1-x>As/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation

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概要

• 論文の詳細を見る

• Inverted single period modulation doped Al_xGa_<1-x>As/GaAs heterostructures with the binary compound on top of the ternary, exhibiting enhanced electron mobilities, were grown by molecular beam epitaxy. Despite the early reports of no mobility enhancement, considerable mobility enhancement was obtained simply by growing the structures at extremely high substrate temperatures. Similar to the case where the ternary is on top of the binary, the electron mobility was observed to be strongly dependent on the spacing between the ionized donors and the electron gas. Electron mobilities as high as 30,400 cm'/Vs at 78 K and 37,900 cm/Vsat 10 K were observed in structures having a net electron concentration of about 5x10^<11> cm^<-2>.

• 社団法人応用物理学会の論文
• 1981-12-05

著者

• Thorne R.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

• Kopp W.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

• Drummond T.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

• MORKOC H.

  Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois

• Morkoc H.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

関連論文

• Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors
• Current Transport in Modulation-Doped Al_xGa_As/GaAs Heterojunction Structures at Moderate Field Strengths
• Mobility Enhancement in Inverted Al_xGa_As/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation
• Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As-GaAs Modulation Doped Layers

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