Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As-GaAs Modulation Doped Layers
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概要
- 論文の詳細を見る
We describe a set of measurements which allows for correction of the measured room temperature two dimensional (2-D) electron gas Hall mobility in (Al, Ga)As-GaAs modulation doped structures to account for parallel conduction effects in the doped (Al, Ga)As layer. The measurements confirm that the actual values of the 2-D electron gas mobility are very close to 9200 cm^2/Vs for samples with a variety of apparent Hall mobilities and undoped spacer layer thicknesses. This demonstrates that the room temperature mobility is nearly independent of the 2-D electron gas concentration n_s when n_s<10^<12> cm^<-2>.
- 社団法人応用物理学会の論文
- 1984-04-20
著者
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Drummond T
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Drummond T.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Lee K.
Department Of Biochemistry College Of Pharmacy Kyung Hee University
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Shur M.
Department Of Electrical Engineering University Of Minnesota
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Morkoc H
Univ. Illinois
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Morkoc H.
Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois
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Klem J
Univ. Illinois
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KLEM J.
Department of Electrical Engineering and Coordinated Science Laboratory, University of Illinois
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Lee K.
Department Of Aquaculture National Taiwan Ocean University
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