Whisker Growth during Epitaxy of GaAs by Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• GaAs whiskers, many of them originating from one point, were observed on GaAs epitaxial layers grown by molecular beam epitaxy. Very small pools of Ga and/or In are believed to precipitate the whiskers which grow at a relatively rapid rate. This whisker growth process is similar to the vapor-liquid-solid (VLS) growth and may not necessarily be a result of any particular substrate defect.

• 社団法人応用物理学会の論文
• 1982-04-20

著者

• Morko〓 H.

  Department Of Electrical Engineeing And Coordinated Science Laboratory University Of Illinois

• STAMBERG R.

  General Dynamics

• KRIKORIAN E.

  General Dynamics

• Krikorian E.

  General Dynamics:(present Address) Aerospace Corp.

関連論文

• Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors
• Whisker Growth during Epitaxy of GaAs by Molecular Beam Epitaxy
• Comparison of Single and Multiple Period Modulation Doped Al_xGa_As/GaAs Heterostructures for FETs

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