Comparison of Single and Multiple Period Modulation Doped Al_xGa_<1-x>As/GaAs Heterostructures for FETs

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概要

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• Current-voltage characteristics of single and three period modulation doped heterostructures intended for high speed FETs are compared. Single period structures exhibited linear characteristics up to 2 kV/cm at 300 K and non-inear characteristics were observed at lower temperatures. Three period structures grown under similar conditions showed negative differential resistance at field strengths above 1 kV/cm, which is attributed to structural properties of interfaces between the ternary and the overlaying binary layers. Although it is possible to improve these interfaces associated with multiple period structures somewhat, the single period structures were found more suitable for high speed FET applications.

• 社団法人応用物理学会の論文
• 1982-02-05

著者

• Drummond T.j.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

• Keever M.

  Department Of Electrical Engineering And Coordinated Science Laboratory University Of Illinois

• Morko〓 H.

  Department Of Electrical Engineeing And Coordinated Science Laboratory University Of Illinois

関連論文

• Performance of Inverted Structure Modulation Doped Schottky Barrier Field Effect Transistors
• Current Transport in Modulation-Doped Al_xGa_As/GaAs Heterojunction Structures at Moderate Field Strengths
• Whisker Growth during Epitaxy of GaAs by Molecular Beam Epitaxy
• Comparison of Single and Multiple Period Modulation Doped Al_xGa_As/GaAs Heterostructures for FETs

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