Low Temperature Copper to Copper Direct Bonding
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概要
- 論文の詳細を見る
We have observed that it is possible to direct bond copper to copper at low temperature. For sputtered Cu surface on silicon wafer without any further surface planarization, we determined that 100℃ temperature and uniform pressure (10^7N/m^2) condition for three hours can produce a very strong Cu-Cu bond. A straight-pull test is completed and the results revealed that an adhesion promoter layer is required at the copper-silicon interface.
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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Li Yang
Department Of Electrical And Computer Engineering University Of California
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BOWER Robert
Department of Electrical and Computer Engineering, University of California
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BENCUYA Izak
Fairchild Semiconductor Corporation
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Li Yang
Department Of Biochemistry Yong Loo Lin School Of Medicine National University Of Singapore
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Bower Robert
Department Of Electrical And Computer Engineering University Of California
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