Surface Roughness of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers

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概要

• 論文の詳細を見る

• We have observed that wafer splitting from hydrogen ion implantation into silicon after low temperature direct bonding creates an expunged film with a surface roughness that is 〜 1 nm (RMS). This result is an order of magnitude smoother than the previous work (〜 10 nm RMS). The key improvement is the use of low temperature bond in our work resulting in a strong bond far below the cut temperature. The smooth as-split surfaces produced using a low temperature bond are very important for creation of very thin (<50 nm) silicon-on-insulator (SOI), three-dimensional bonded structures and nanostructures that are split after processing.

• 社団法人応用物理学会の論文
• 2000-01-15

著者

• Li Y.albert

  Department Of Electrical And Computer Engineering University Of California

• Bower Robert

  Department Of Electrical And Computer Engineering University Of California

関連論文

• Low Temperature Copper to Copper Direct Bonding
• Systematic Low Temperature Silicon Bonding using Pressure and Temperature
• Surface Roughness of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers

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