The Effect of BCl_3 Addition on RUO_2 Etching in M = 0 Helicon Reactor

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概要

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• Photoresist patterned ruthenium oxide etching for ferroelectric capacitor structured device has been studied using high density helicon wave plasma. The trends in the effect on the etch rate and selectivity to photoresist for BCl_3 ratio to Cl_2 have been determined. It was found that the strong scavenging effect of BCl_3 lead primarily after ion bombardment on the film surface. The possible mechanism on the reduction of the issued by-product, RuO_4, during plasma process was proposed using plasma and optical emission data.

• 社団法人応用物理学会の論文
• 1998-05-01

著者

• Tynan George

  Trikon Technologies

• Kim Yun-sang

  Trikon Technologies

• RAMPERSAD Regan

  Trikon Technologies

• Kim Yun-San

  Trikon Technologies

関連論文

• Selective Plasma Etching for High-Aspect-Ratio Oxide Contact Holes
• Secondary Corrosion of Aluminum Alloy Due to Residual Sidewall and Its Removal Using M=0 Helicon Plasma Reactor
• The Effect of BCl_3 Addition on RUO_2 Etching in M = 0 Helicon Reactor

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