Selective Plasma Etching for High-Aspect-Ratio Oxide Contact Holes

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概要

• 論文の詳細を見る

• The effects of pressure and CH_2F_2 percentage on the selectivity of oxide to photoresist (oxide:PR) and on reactive ion etch (RIE) lag in a helicon wave high-density CF_4/CH_2F_2 plasma are reported. Operating the helicon source in high-pressure (20-30 mTorr) fluorocarbon and hydrofluorocarbon plasmas results in highly selective oxide etching. By independently controlling the formation rate of depositing polymer precursors, RIE lag effects can be minimized. Plasma and spectroscopic data suggest a correlation between the polymer deposition rate, high oxide:PR selectivity, and reduced RIE lag. An explanation for the results, based upon operation in a downstream mode combined with collisional sheath effects and isotropic polymer deposition, is proposed.

• 社団法人応用物理学会の論文
• 1998-01-15

著者

• Wei Peter

  Trikon Technologies Inc.:(present Address) Dept. Chemical Engineering Chun-yuan Unversity

• Tynan George

  Trikon Technologies

• KIM Yun-Sang

  Trikon Technologies, Inc.

• CHARATAN Robert

  Trikon Technologies, Inc.

• HEMKER Dave

  Trikon Technologies, Inc.

• Kim Yun-sang

  Trikon Technologies

• Hemker Dave

  Trikon Technologies Inc.

• Kim Yun-sang

  Trikon Technologies Inc.

• Charatan Robert

  Trikon Technologies Inc.

関連論文

• Selective Plasma Etching for High-Aspect-Ratio Oxide Contact Holes
• Secondary Corrosion of Aluminum Alloy Due to Residual Sidewall and Its Removal Using M=0 Helicon Plasma Reactor
• The Effect of BCl_3 Addition on RUO_2 Etching in M = 0 Helicon Reactor

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