Secondary Corrosion of Aluminum Alloy Due to Residual Sidewall and Its Removal Using M=0 Helicon Plasma Reactor
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概要
- 論文の詳細を見る
Various ways of the post metal etch treatment to prevent the possible secondary corrosion was investigated. It is found that the one of the reasons of the degradation in device wafer which processed by the post treatment after Al alloy (TiN/Al-Si -Cu/TiN/Ti) plasma etch should be the potent corrosion occurred at the next device manufacturing sequences. Usually it is hardly detected during normal inspections in dry process step. BCl_3 plasma treatment right after plasma etching could remove the precursor of the potent corrosion by reducing Ti on the etched Al sidewall.
- 社団法人応用物理学会の論文
- 1998-11-01
著者
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Song Chi-wha
Hyundai Electronics Industries Co. Ltd.
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Ji Ho-yeon
Trikon Technologies Inc.
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Kim Yun-sang
Trikon Technologies
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Kim Yun-sang
Trikon Technologies Inc.:applied Materials Inc.
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HAN Kyo-Sik
Trikon Technologies, Inc.
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Han Kyo-sik
Trikon Technologies Inc.:gasonics International Korea
関連論文
- Selective Plasma Etching for High-Aspect-Ratio Oxide Contact Holes
- Secondary Corrosion of Aluminum Alloy Due to Residual Sidewall and Its Removal Using M=0 Helicon Plasma Reactor
- The Effect of BCl_3 Addition on RUO_2 Etching in M = 0 Helicon Reactor