Controlling Plastic Relaxation Using Graded Superlattice Buffer Layers

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概要

• 論文の詳細を見る

• AlSb layers thicker than the critical thickness for the onset of plastic relaxation were successfully grown on (001) GaSb substrates by molecular beam epitaxy. This was achieved using graded superlattice buffer layers (gSL-BL). The accommodation of misfit strain using this buffer is discussed, and the X-ray diffraction characteristics of the buffer are presented. The diffraction pattern is shown to modulates into two sets of satellite peaks.

• 社団法人応用物理学会の論文
• 1989-03-20

著者

• Kimata Morihiko

  Electrical Engineering Department Waseda University

• Villaflor Antonio

  Electrical Engineering Department Waseda University

関連論文

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• A Simple Model for Negative Resistance by Impact Ionization of Deep Level Impurities
• Analysis of GaSb/AlSb Strained Layers Superlattices Using Small Angle X-Ray Diffraction : Condensed Matter
• Controlling Plastic Relaxation Using Graded Superlattice Buffer Layers
• A Monte Carlo Simulation of the Evacuation Process in the Molecular Flow Regime : Techniques, Instrumentations and Measurement

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