A Simple Model for Negative Resistance by Impact Ionization of Deep Level Impurities

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概要

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• A simple model for the negative resistance is proposed taking into account of impact ionization of deep level impurities. The positive feed back by the conductivity modulation due to the number of carriers are taken into account. But the modulations of mobility are neglected. The results of the calculations show that this model can explain qualitatively, the influences of resistivity, density of deep level impurities and their ionization energy, on the characteristics of high resistivity extrinsic semiconductors with injective or ohmic contacts, for example germanium p-i-n junctions.

• 社団法人応用物理学会の論文
• 1965-10-15

著者

• Kani Kenji

  Electrical Engineering Department Waseda University

• Kimata Morihiko

  Electrical Engineering Department Waseda University

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