Optical Absorption in CdTe Detected through Channel Conduction in CdTe/InSb/CdTe Single Quantum Well Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
The measurement of the photocurrent in an undoped thin layer of CdTe is difficult because of its high resistivity. However, if carriers generated by optical absorption in the CdTe layer fall into a single quantum well, it is easy to determine the number of these carriers through the measurement of the channel current in the quantum well. By means of this method, well-width-independent absorption spectra of CdTe are obtained. The molecular beam epitaxy grown samples used have the following structure: CdTe/InSb/CdTe/GaAs. However, we could not specify the origin of the absorption peak occurring in the lower energy side of the band edge.
- 社団法人応用物理学会の論文
- 1993-04-15
著者
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KANEKO Kazuhiko
Department of Obstetrics and Gynecology, Japanese Red Cross Katsushika Maternity Hospital
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Kaneko Kazuhiko
Department Of Electrical Engineering School Of Science And Engineering Waseda University
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Kimata Morihiko
Electrical Engineering Department Waseda University
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SUZUKI Takayuki
Electrical Engineering Department, Waseda University
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LIBATIQUE Nathaniel
Electrical Engineering Department, Waseda University
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Libatique Nathaniel
Electrical Engineering Department Waseda University
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Kaneko Kazuhiko
Department Of Electronics And Information Technology North Shore College
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Suzuki Takayuki
Electrical Engineering Department Waseda University
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