Growth of SiO_2 Needles Induced by Positive Corona Discharging

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概要

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• Growth of needles induced by positive discharging in air containing a small amount of dimethyl-poly-siloxane (DMPS) vapor was examined. After discharging for 30 to 120 minutes in pure air containing DMPS vapor, amorphous SiO_2 needles and a thin film had grown on tungsten wire anode. The needles had a hollow tube running parallel to the axis of each needle. In contrast, needles grown in just pure air contain tungsten. The growth of needles caused by plasma oxidation of DMPS and by sputtering of the tungsten wire anode owing to negative ion impinging is discussed.

• 1987-07-20

著者

• Nashimoto Keiichi

  Xerographic Technology Research Laboratory Fuji Xerox Co. Ltd.

関連論文

• Growth of SiO_2 Needles Induced by Positive Corona Discharging
• Silicon Oxide Projections Grown by Negative Corona Discharge : Condensed Matter
• Effect of Anode Surface on Growth of Silicon Oxide Needles Induced by Positive Corona Discharge : Condensed Matter
• Growth Behavior of Silicon Oxide on Wire Anode of Positive Corona Discharge : Condensed Matter

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