Silicon Oxide Projections Grown by Negative Corona Discharge : Condensed Matter

スポンサーリンク

概要

• 論文の詳細を見る

• Products grown on a wire cathode by negative corona discharge in air containing a small amount of dimethylpolysiloxane vapor at atomospheric pressure were studied. After discharge for 120 minutes in dry air containing DMPS vapor, growth of amorphous silicon oxide projections and thin film was found on the tungsten wire cathode. The growth of the clusters of projections on the wire cathode occurred at certain intervals, and the location of the clusters corresponded to the figure of corona luminescence and the distribution of discharge current. The silicon oxide grown by negative discharge contained more OH and less oxygen than that grown by positive discharge. The growth mechanism of silicon oxide is explained as the plasma oxidation of DMPS vapor.

• 社団法人応用物理学会の論文
• 1988-06-20

著者

• Nashimoto Keiichi

  Xerographic Technology Research Laboratory Fuji Xerox Co. Ltd.

関連論文

• Growth of SiO_2 Needles Induced by Positive Corona Discharging
• Silicon Oxide Projections Grown by Negative Corona Discharge : Condensed Matter
• Effect of Anode Surface on Growth of Silicon Oxide Needles Induced by Positive Corona Discharge : Condensed Matter
• Growth Behavior of Silicon Oxide on Wire Anode of Positive Corona Discharge : Condensed Matter

スポンサーリンク