Growth Behavior of Silicon Oxide on Wire Anode of Positive Corona Discharge : Condensed Matter

概要

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The growth behavior of the silicon oxide needles and films grown on a wire anode was observed after positive corona discharges in air containing dimethylpolysiloxane vapor at atmospheric pressure. At the primary stage of growth, a thin film and projections grew on the wire anode, and the projections were not uniformly distributed. With an increase of discharging time, the islands made of these projections tended to cover the whole surface of the wire anode uniformly, and the projections grew to needles, whereas the thikness of the thin film was almost the same at each discharging time. By examining discharge characteristics, it was also found that the growing silicon oxide was not insulative in a discharging state and a voltage increase to gain a constant discharge current with the growth of silicon oxide resulted from an increase of apparent wire anode radius.
社団法人応用物理学会の論文
1988-08-20