Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs
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概要
- 論文の詳細を見る
Interaction of non-radiative recombination centers with dislocations in a LEC-grown GaAs crystal is investigated by observing the change in cathodoluminescence image caused by various heat-treatments. Impurities related to non-radiative recombination centers are gettered by dislocations most effectively at a temperature of around 750℃. The cause of the gettering is concluded to be due to the reaction incorporating the impurities that takes place at the dislocation core.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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Sumino Koji
The Research Institute For Iron Steel And Other Metals
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SEKIGUCHI Takashi
The Research Institute for Iron, Steel and Other Metals, Tohoku University
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Sekiguchi Takashi
The Research Institute For Iron Steel And Other Metals Tohoku University
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- Microdynamics of Dislocations in Plastic Deformation of Germanium Crystals
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- Mechanical Strength of Oxygen-doped Float-Zone Silicon Crystals
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- Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs
- Interaction of Dislocation with Atomic Order in Solid Solutions
- Role of Carbon in the Strengthening of Silicon Crystals
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- Effect of Dislocations on the Low Temperature Thermal Conductivity in Germanium
- Easy Operation of Dislocation Sources in the Surface Region of Crystal during Plastic Deformation
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