Acceptors in n-Type Silicon Crystals Induced by Plastic Deformation
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概要
- 論文の詳細を見る
The carrier concentration and the Hall mobility in plastically deformed n-type silicon crystals are measured as a function of the temperature and the density of dislocations introduced. The results show that the deformation-induced defects act as acceptors. The acceptor level is found to be located between 0.34 eV and 0.42 eV above the valence band, being higher for higher densities of dislocations introduced.
- 社団法人応用物理学会の論文
- 1980-10-05
著者
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Sumino Koji
The Research Institute For Iron Steel And Other Metals
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Sumino Koji
The Research Institute For Iron Steel And Other Metals Tohoku University
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Ono Haruhiko
The Research Institute For Iron Steel And Other Metals Tohoku University
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