The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown Silicon
スポンサーリンク
概要
- 論文の詳細を見る
The mobility of individual dislocations was measured by means of in-situ observations, including the use of X-ray topography, for both Czochralski- and float-zone silicon crystals. No difference in mobilities was found between the two types of crystals. Stress-strain characteristics were also measured for both types of crystals. On the basis of observed facts, it is concluded That the difference in the mechanical strengths of the two types of silicon crystals is associated with the locking effect of dislocations by oxygen atoms.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
-
Sumino Koji
The Research Institute For Iron Steel And Other Metals
-
Sumino Koji
The Research Institute For Iron Steel And Other Metals Tohoku University
-
HARADA Hirofumi
The Research Institute for Iron, Steel and Other Metals, Tohoku University
-
Yonenaga Ichiro
The Research Institute For Iron Steel And Other Metals Tohoku University
-
Harada Hirofumi
The Research Institute For Iron Steel And Other Metals Tohoku University
-
SUMINO Koji
The Research Institute for Iron, Steel and Other Metals, Tohoku University
関連論文
- Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
- Effect of Uniaxial Stress on the Photoluminescence from Plastically Deformed Silicon
- Radiative Recombination on Dislocations in Silicon Crystals
- Deep Defect Levels in Plastically Deformed GaAs
- Plastic Deformation of Foil Copper Crystals. II : Electron Microscopical Study
- Plastic Deformation of Foil Copper Crystals. I : Study of Work-Hardening Behavior
- Work-hardening of Foil Crystals of Copper
- Distribution Patterns of Strain and Dislocations Around Indented Areas in Germanium Crystals as Observed by X-Ray Topography
- Microdynamics of Dislocations in Plastic Deformation of Germanium Crystals
- Temperature Dependence of Hardness and Dislocation Distribution Pattern Formed by Indentation in Germanium Crystals
- Strain-Rate and Temperature Dependence of Mechanical Behaviour in Germanium Crystals
- Distribution of Dislocations in Germanium Single Crystals during Plastic Deformation
- The Origin of the Difference in the Mechanical Strengths of Czochralski-Grown Silicon and Float-Zone-Grown Silicon
- Acceptors in n-Type Silicon Crystals Induced by Plastic Deformation
- Difference in the Mechanical Strengths of Dislocation-Free Crystals of Czochralski Silicon and Float-Zone Silicon
- Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms
- Oxygen Donors Developed around Dislocations in Silicon
- Mechanical Strength of Oxygen-doped Float-Zone Silicon Crystals
- Distribution of Dislocations in Germanium Single Crystals during Plastic Deformation
- Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs
- Interaction of Dislocation with Atomic Order in Solid Solutions
- Role of Carbon in the Strengthening of Silicon Crystals
- HVEM Structure Images of Extended 60°- and Screw Dislocations in Silicon
- Anisotropy in the Hardness on (111) and (1^^-1^^-1^^-) Surfaces in InSb
- Dislocation Loops in an InSb Crystal
- Dislocation Configuration during Incubation Period of Creep in Germanium Crystals
- Effect of Dislocations on the Low Temperature Thermal Conductivity in Germanium
- Easy Operation of Dislocation Sources in the Surface Region of Crystal during Plastic Deformation
- Development of Dislocation Structure and Its Correlation with Slip Band Distribution in Germanium Crystals