Cross-Sectional Transmission Electron Microscopy Study of Si/SiGe Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-07-15

著者

• Tsien Pei-hsin

  Institute Of Microelectronics Tsinghua University

• Lo Tai-chin

  Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology

• ZHANG Jinshu

  Institute of Microelectronics, Tsinghua University

• JIN Xiaojun

  Institute of Microelectronics, Tsinghua University

• Jin X

  Beijing Univ. Beijing Chn

• Zhang Jinshu

  Institute Of Microelectronics Tsinghua University

• Jin Xiaojun

  Institute Of Microelectronics Tsinghua University

関連論文

• Cross-Sectional Transmission Electron Microscopy Study of Si/SiGe Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition
• Reaction Mechanism of Selective Plating between TiW and Au:An Innovative Metallization Scheme for High-Speed Electronics
• Optimization of a Novel Self-Planarizing Au Metallization Process for Practical VLSI Applications
• Downsizing Gold Wires to Submicron Range: A Self-Planarized Au Metallization Process by Selective Electroplating for Si LSI Applications

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