Reaction Mechanism of Selective Plating between TiW and Au:An Innovative Metallization Scheme for High-Speed Electronics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-12-15
著者
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Lo Tai-chin
Department Of Electrical And Electronic Engineering Hong Kong University Of Science And Technology
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Lo Tai-chin
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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CHAN Miu-Ying
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technol
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Chan Miu-ying
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
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Chan Miu-ying
Department Of Electrical And Electronic Engineering The Hong Kong University Of Science And Technolo
関連論文
- Cross-Sectional Transmission Electron Microscopy Study of Si/SiGe Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition
- Reaction Mechanism of Selective Plating between TiW and Au:An Innovative Metallization Scheme for High-Speed Electronics
- Optimization of a Novel Self-Planarizing Au Metallization Process for Practical VLSI Applications
- Downsizing Gold Wires to Submicron Range: A Self-Planarized Au Metallization Process by Selective Electroplating for Si LSI Applications