Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-07-15

著者

• Erasmus R.

  Physics Department University Of Pretoria

• AURET F.

  Physics Department, University of Pretoria

• GOODMAN S.

  Physics Department, University of Pretoria

• MEYER W.

  Physics Department, University of Pretoria

• MYBURG G.

  Physics Department, University of Pretoria

• Auret F.

  Physics Department University Of Pretoria

• Myburg G.

  Physics Department University Of Pretoria

• Goodman S.

  Physics Department University Of Pretoria

• Meyer W.

  Physics Department University Of Pretoria

関連論文

• Electric Field Effect on the Emission of Electron-Irradiation-Induced Defects in n-GaAs
• Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy
• A Metastable Alpha-Particle Irradiation Induced Defect in n-GaAs
• Electrical Properties of Sc Schottky Barrier Diodes Fabricatede on Argon-Ion Sputtered p-GaAs
• Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs
• Simultaneous Observation of Sub- and Above Threshold Electron Irradiation Induced Defects in GaAs
• Deep Level Transient Spectroscopy Characterization of Defects Introduced in n-GaAs after Alpha Irradiation at 15 K
• Defect Characterization of Sputter Deposited Au Contacts on N-Type Si_Ge_x
• Electric Field Enhanced Emission from Two Alpha-Particle Irradiation Induced Traps in n-GaAs

スポンサーリンク