Simultaneous Observation of Sub- and Above Threshold Electron Irradiation Induced Defects in GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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MYBURG G.
Physics Department, University of Pretoria
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Auret F
Physics Department University Of Pretoria
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Myburg G
Physics Department University Of Pretoria
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Myburg G.
Physics Department University Of Pretoria
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AURET F.D.
Physics Department, University of Pretoria
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BREDELL L.J.
Physics Department, University of Pretoria
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BARNARD W.O.
Physics Department, University of Pretoria
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Bredell L.j.
Physics Department University Of Pretoria
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Barnard W.o.
Physics Department University Of Pretoria
関連論文
- Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy
- Electrical Properties of Sc Schottky Barrier Diodes Fabricatede on Argon-Ion Sputtered p-GaAs
- Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs
- Simultaneous Observation of Sub- and Above Threshold Electron Irradiation Induced Defects in GaAs
- Defect Characterization of Sputter Deposited Au Contacts on N-Type Si_Ge_x