Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Goodman S

  Univ. Pretoria Pretoria Zaf

• Goodman Stewart

  Physics Department University Of Pretoria

• AURET F.

  Physics Department, University of Pretoria

• Auret F

  Physics Department University Of Pretoria

• Auret F.

  Physics Department University Of Pretoria

• Myburg G

  Physics Department University Of Pretoria

• MYBURG Gerrit

  Physics Department, University of Pretoria

• WILSON Albertus

  Physics Department, University of Pretoria

• Wilson Albertus

  Physics Department University Of Pretoria

• Goodman Stewart

  Physics Department, University of Pretoria

関連論文

• Electric Field Effect on the Emission of Electron-Irradiation-Induced Defects in n-GaAs
• Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy
• A Metastable Alpha-Particle Irradiation Induced Defect in n-GaAs
• Electrical Properties of Sc Schottky Barrier Diodes Fabricatede on Argon-Ion Sputtered p-GaAs
• Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs
• Simultaneous Observation of Sub- and Above Threshold Electron Irradiation Induced Defects in GaAs
• Deep Level Transient Spectroscopy Characterization of Defects Introduced in n-GaAs after Alpha Irradiation at 15 K
• Defect Characterization of Sputter Deposited Au Contacts on N-Type Si_Ge_x
• Electric Field Enhanced Emission from Two Alpha-Particle Irradiation Induced Traps in n-GaAs

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