Electric Field Enhanced Emission from Two Alpha-Particle Irradiation Induced Traps in n-GaAs

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概要

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• The electric field dependence of the emission rates of two alpha-particle irradiation-induced electron traps in epitaxially grown n-GaAs, Eα3 and Eα4, was studied using deep level transient spectroscopy (DLTS). We found the emission enhancement from Eα4 to be much more pronounced than that from Eα3, emphasising the difference in their structure. Neither of the two defects shows an emission enhancement characteristic of the Poole-Frenkel effect, commonly assumed to account for field dependent emission enhancement. The phonon-assisted tunnelling model accurately describes the field dependent emission enhancement of both the Eα3 and the Eα4 defects.

• 社団法人応用物理学会の論文
• 1996-01-01

著者

• Goodman Stewart

  Physics Department University Of Pretoria

• Auret F.

  Physics Department University Of Pretoria

• MEYER Walter

  Physics Department, University of Pretoria

関連論文

• Electric Field Effect on the Emission of Electron-Irradiation-Induced Defects in n-GaAs
• Deep Level Transient Spectroscopy Characterization of Electron Irradiation Induced Hole Traps in p-GaAs Grown by Molecular Beam Epitaxy
• A Metastable Alpha-Particle Irradiation Induced Defect in n-GaAs
• Electrical Properties of Sc Schottky Barrier Diodes Fabricatede on Argon-Ion Sputtered p-GaAs
• Neutron Irradiation Induced Defects in Low Free Carrier Concentration Epitaxially Grown n-GaAs
• Deep Level Transient Spectroscopy Characterization of Defects Introduced in n-GaAs after Alpha Irradiation at 15 K
• Defect Characterization of Sputter Deposited Au Contacts on N-Type Si_Ge_x
• Electric Field Enhanced Emission from Two Alpha-Particle Irradiation Induced Traps in n-GaAs

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