Enhancement Effect of Plasma Enhanced Chemical Vapor Deposited SiN Capping Layer on Dielectric Cap Quantum Well Disordering
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概要
- 論文の詳細を見る
Quantum Well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850℃ for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3×10^<-17> cm^2/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.
- 社団法人応用物理学会の論文
- 1995-04-01
著者
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Lee Seok
Division Of Hematolgoy Catholic Hematopoietic Stem Cell Transplantation Center College Of Medicine T
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Kim Sang
Division Of Electrical And Computer Engineering Pohang University Of Science And Technology (posteth
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Kang Kwang
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Lee Jung
Division Of Cardiology Severance Cardiovascular Hospital Yonsei University College Of Medicine
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Kim Yong
Division Of Allergy And Respiratory Medicine Department Of Internal Medicine Genome Research Center
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Choi Won
Division Of Advanced Chemical Technology Korea Research Institute Of Chemical Technology
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Cho Kyuman
Department Of Physics Sogang University
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Kim Sang
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Zhang J
Department Of Electronic Engineering Southeast University:department Of Chemistry Southeast Universi
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ZHANG Jingming
Institute of Semiconductor, Chinese Academy of Sciences
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Zhang Jiandi
Center For Materials Research And Analysis And The Department Of Physics University Of Nebraska
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Choi Won
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Lee Jung
Division Of Applied Life Science Gyeong Sang National University
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Lee Seok
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Kim Sang
Division Of Bioscience And Bioinformatics Myongji University
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KIM Sang
Division of Applied Life Science, Gyeongsang National University
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