Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW

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概要

• 論文の詳細を見る

• Data are presented on InGaAs-AlGaAs strained quantum well lasers with a molecular beam epitaxy (MBE) grown LT-GaAs current-blocking layer on a p-type GaAs substrate. The SCH DQW structure is grown y metalorganic vapor-phase epitaxy (MOVPE) on the channeled LT-GaAs. The CW laser threshold is 50 mA at RT (uncoated) and the maximum output power of 120 mW is obtained (AR-HR coated). Far-field patterns show fundamental lateral and ransverse modes even at the output power at 100 mW. Full widths at half-maximum of far-field patterns parallel and perpendicular to the junction plane are 14.5°and 39.5°at 100 mW, respectively.

• 1995-01-15

著者

• Sin Yong

  Photonic Devices Lab., Semiconductor R & D Laboratories II, Hyundai Electronics Industries Co., Ltd.

• Horikawa Hideaki

  Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.

• Sin Yong

  Photonic Devices Laboratory Semiconductor R & D Laboratories Hyundai Electronics Industries Co.

• Horikawa Hideaki

  Semiconductor Technical Laboratory Oki Electric Industry Co. Ltd.

関連論文

• High-Power InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate
• Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW
• Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-Termperature H_2 Annealing in Metalorganic Vapor Phase Epitaxy
• Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H_2 Annealing and MOVPE Regrowth

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