High-Power InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• We report on device results from channel guide InGaAs-GaAs strained quantum well lasers with InGaP cladding layers. Channel guide lasers are demonstrated with the current blocking scheme using a p-n-p InGaP junction on p^+-GaAs substrate. The laser structure is grown by metalorganic vapor-phase epitaxy (MOVPE) on the channeled n-InGaP layer. The uncoated lasers show CW laser threshold of 11 mA at RT, output power over 125 mW, fundamental lateral and transverse modes, and lasing wavelength of 0.98 μm at 50 mW. Anti-reflectivity-high reflectivity (AR-HR) coated lasers show high output powers of 302 mW.

• 1995-05-15

著者

• Sin Y

  Photonic Devices Lab. Semiconductor R & D Laboratories Ii Hyundai Electronics Industries Co. Ltd

• Horikawa H

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Sin Yong

  Photonic Devices Lab., Semiconductor R & D Laboratories II, Hyundai Electronics Industries Co., Ltd.

• Horikawa Hideaki

  Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.

関連論文

• High-Power InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate
• Low Temperature-GaAs Current-Blocking InGaAs-AlGaAs Strained Quantum Well Lasers on P-type GaAs Substrate with Output Power over 100 mW
• Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-Termperature H_2 Annealing in Metalorganic Vapor Phase Epitaxy
• Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H_2 Annealing and MOVPE Regrowth

スポンサーリンク