Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H_2 Annealing and MOVPE Regrowth
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Horikawa Hideaki
Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.
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Horikawa Hideaki
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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GOTOH Shu
Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd,
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Gotoh Shu
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd
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Gotoh Shu
Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.
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- Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-Termperature H_2 Annealing in Metalorganic Vapor Phase Epitaxy
- Characteristics of AlGaAs/AlGaAs Interface after In-Situ Low-Temperature H_2 Annealing and MOVPE Regrowth