Characteristics of AlGaAs/AlGaAs Interface Regrown Using In-Situ Low-Termperature H_2 Annealing in Metalorganic Vapor Phase Epitaxy

概要

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Characteristics of an AlGaAs/AlGaAs interface regrown using a new thermal treatment method, in-situ low-temperature H_2 annealing (LTHA), are studied by photoluminescence (PL) measurement, secondary ton mass spectroscopy (SIMS) and cross-sectional transmission electron microscopy (TEM). In LTHA, annealing in H_2 ambient at temperatures below 400℃ is carried out before metalorganic vapor phase epitaxial (MOVPE) regrowth. LTHA markedly restores the spectrum of PL from AlGaAs/GaAs quantum wells near the regrown interface, indicating that the initial air-exposed AlGaAs surface states are reduced. SIMS and TEM results reveal that the oxides are removed from an initial air-exposed AlGaAs surface during LTHA, and the atomically ordered and stoichiometric AlGaAs/AlGaAs regions with a width of 30-70 Å appear along the regrown interface, proving that LTHA possesses a surface cleaning effect even at such low temperatures.
社団法人応用物理学会の論文
1997-03-30