Effect of Light Irradiation on Sulfide-Treated GaAs with SiO_2 Deposition

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概要

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• The degradation mechanism of sulfide-treated ad SiO_2 deposited GaAs has been studied. The sulfide treatment removes the oxide of GaAs and Ga-dangling bonds, and increases the intensity of photoluminescence. However, by the irradiation of UV light or Ar^+ laser, the photoluminescence intensity is reduced substantially. X-ray Photo-electron Spectroscopy (XPS) aalysis ad C-V measurement show that the Ga-S bonds generated by the sulfide treatment become Ga-dangling bonds due to the light irradiation. We believe this is the reason why the photoluminescence intensity decreases, and therefore, it is necessary to avoid light irradiation after sulfide treatment and SiO_2 deposition on GaAs in order to maintain the surface-passivation effect.

• 社団法人応用物理学会の論文
• 1994-03-01

著者

• KO Hyun-Chul

  Department of Electronic Science and Engineering, Kyoto University

• Ko H‐c

  Department Of Electronic Science And Engineering Kyoto University

• Ko Hyun-chul

  Hitachi Ltd. Central Research Laboratory:goldstar Ltd. Central Research Laboratory

• UCHIDA Kenji

  Hitachi Ltd., Central Research Laboratory

• Uchida Kenji

  Hitachi Ltd. Central Research Laboratory

• NAKATSUKA Shin'ichi

  Hitachi Ltd., Central Research Laboratory

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• Self-Organizing Process of Moderately Strained Zn_Cd_xSe Layer Grown on GaAs(110) by Molecular Beam Epitaxy
• Effect of Light Irradiation on Sulfide-Treated GaAs with SiO_2 Deposition
• Dependence of Photoluminescence Intensity Enhancement due to Sulfide Treatment on Carrier Concentration and Conduction Type of GaAs

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