III-V Semiconducting Nitrides : Physical Properties under Pressure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Porowski S
High Pressure Res. Center Polish Acad. Sci. Warsaw Pol
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Porowski S.
High Pressure Research Center Polish Academy Of Sciences
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SUSKI T.
High Pressure Research Center Polish Academy of Sciences
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PERLIN P.
High Pressure Research Center, Polish Academy of Sciences
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GORCZYCA I.
High Pressure Research Center, Polish Academy of Sciences
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CHRISTENSEN N.
Institute of Physics, Aarhus University
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POLIAN A.
Physique des Milieux Condenses Unviersite Paris VI
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Perlin P.
High Pressure Research Center Polish Academy Of Sciences
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Gorczyca I.
High Pressure Research Center Polish Academy Of Sciences
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Polian A.
Physique Des Milieux Condenses Universite P. & M. Curie
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Christensen N.
Institute Of Physics Aarhus University
関連論文
- GaN Single Crystals Grown by High Pressure Solution Method
- Unusual Behaviour of the DX-Centre in GaAs:Ge
- III-V Semiconducting Nitrides : Physical Properties under Pressure
- InN Thermodynamics and Crystal Growth at High Pressure of N_2
- Electron Transport in Antidot GaAs/AlGaAs Structures under Hydrostatic Pressure
- Pressure Studies of Tunneling between Two-Dimensional Electron Gas Systems
- GaP-GaN Pseudobinary System. Crystal Growth of GaN from the Solution in the Liquid GaP
- Structural Study of Layered PbFCl-Type Compounds
- Application of Pressure Grown GaN Substrates to Epitaxy