Unusual Behaviour of the DX-Centre in GaAs:Ge
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Wisniewski P.
High Pressure Research Center Polish Academy Of Sciences
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Giling L.
Exp. Solid State Pysics Iii And High Magnet Laboratory University Of Nijmegen
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Eremets M.
High Pressure Institute Russian Academy Of Sciences
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Nicholas R.
The Clarendon Laboratory
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SUSKI T.
High Pressure Research Center Polish Academy of Sciences
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WEL P.
Exp. Solid State Pysics III and High Magnet Laboratory, University of Nijmegen
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SINGLETON J.
The Clarendon Laboratory
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SKIERBISZEWSKI C.
High Pressure Research Center, Polish Academy of Sciences
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WARBURTON R.
The Clarendon Laboratory
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WALKER P.
The Clarendon Laboratory
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MASON N.
The Clarendon Laboratory
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Wel P.
Exp. Solid State Pysics Iii And High Magnet Laboratory University Of Nijmegen
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Skierbiszewski C.
High Pressure Research Center Polish Academy Of Sciences
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Singleton J.
The Clarendon Laboratory:exp. Solid State Pysics Iii And High Magnet Laboratory University Of Nijmeg
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SUSKI T.
High Pressure Research Center, Polish Academy of Sciences
関連論文
- GaN Single Crystals Grown by High Pressure Solution Method
- Unusual Behaviour of the DX-Centre in GaAs:Ge
- III-V Semiconducting Nitrides : Physical Properties under Pressure
- Electron Transport in Antidot GaAs/AlGaAs Structures under Hydrostatic Pressure
- Pressure Studies of Tunneling between Two-Dimensional Electron Gas Systems