Electron Transport in Antidot GaAs/AlGaAs Structures under Hydrostatic Pressure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Bohm G.
Walter Schottky Institut Technische Universitat Munchen
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Weimann G.
Walter Schottky Institut Technische Universitat Munchen
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SUSKI T.
High Pressure Research Center Polish Academy of Sciences
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Suski T
Unipress Polish Academy Of Sciences
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Gornik E.
Walter Schottky Institut Technische Universitat Munchen
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BERTHOLD G.
Walter Schottky Institut, Technische Universitat Munchen
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SMOLINER J.
Walter Schottky Institut, Technische Universitat Munchen
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MASCHEK R.
Walter Schottky Institut, Technische Universitat Munchen
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Maschek R.
Walter Schottky Institut Technische Universitat Munchen
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Smoliner J.
Walter Schottky Institut Technische Universitat Munchen
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Berthold G.
Walter Schottky Institut Technische Universitat Munchen
関連論文
- GaN Single Crystals Grown by High Pressure Solution Method
- Unusual Behaviour of the DX-Centre in GaAs:Ge
- III-V Semiconducting Nitrides : Physical Properties under Pressure
- Deformation Potential in High Electron Mobility GaAs/ GaAsAs Heterostructures
- Electron Transport in Antidot GaAs/AlGaAs Structures under Hydrostatic Pressure
- Pressure Studies of Tunneling between Two-Dimensional Electron Gas Systems