Pressure Dependence of Photoluminescence in Ordered Ga_<0.5>In_<0.5>P Alloys Grown by OMVPE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-01
著者
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Kobayashi Toshihiko
Department Of Electrical And Electric Engineering Kobe University
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Kobayashi Toshihiko
Department Of Electrical And Electronic Engineering Kobe University
関連論文
- Pressure Dependence of Photoluminescence in GaAs/Partially Ordered GaInP Interface
- Comparative Study of Photoluminescence in Ordered and Disordered Ga_In_P Alloys under Hydrostatic Pressure
- Microwave Conductivity of n-Type Germanium in the Presence of High Electric Field
- Measurement of the Microwave Conductivity of Semiconductors by a Cavity Perturbation Method
- Anisotropy of Microwave Complex Conductivity Due to Hot Electrons in n-Type Germanium
- Determination of Energy Relaxation Time of Hot Carriers in n-Type Germanium from Measurements of Millimeter-Wave Complex Conductivity
- Approximate Polarized-Orbital Calculations of Electron-Exciton Elastic Collision Cross Sections
- Photocurrent Noise Observed by Resonant Photoexcitation at 4.2 K in n-GaAs
- Current Noise due to Impact Ionization of Shallow Neutral Donor in n-GaAs
- Pressure Dependence of Time-Pesolved Photoluminescence in Ordered Ga_In_P
- High-Pressure Study of Deep Emission Band at GaInP/GaAs Interface
- Chaotic Motions in the Electrical Avalanche Breakdown Caused by Weak Photoexcitation in n-GaAs
- Paramagnetic Resonance of Chromium Ions in CdIn_2S_4 Single Crystals
- Pressure Dependence of Photoluminescence in Ordered Ga_In_P Alloys Grown by OMVPE