Estimation of Radiation Damage and Pattern Resolution in Ion Direct Writing Using Scattering of Low Energetic Ions

概要

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An estimation of the radiation damage and pattern resolution in ion direct writing is presented by a Monte Carlo simulation of the slowing down and scattering of low-energy ions and recoiled atoms in an amorphous target. The simulation program is characterized by employing the power of a logarithm approximation as a screening function, the distance between collisions and a modified step length based on a binary collision model. Calculated results are in terms of radiation damage depth and fine pattern resolution using sputtering and radiation damage as a semiconductor fabrication technique. Consequently, available informations can be obtained as ion lithography using sputtering and radiation damage that has a much finer pattern resolution (less than a few 10s Å) than electron beam lithography using a latent resust image.
社団法人応用物理学会の論文
1987-04-20