Ar^+ -Si Sputtering in Low Temperature and High Vacuum Pressure Ranges

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概要

• 論文の詳細を見る

• The influence of temperature and pressure on the sputtering yield was examined in a low-temperature range of - 100 to 300℃ and a high-pressure range of 5×10^<-5> to 5×10^<-4> Torr. This work was carried out with an ion-etching system using a Kaufman-type ion source. The results suggest that the temperature and pressure influence the sputtering or applicaltions using sputtering at 1 keV Ar^+ -Si ion bombardment.

• 社団法人応用物理学会の論文
• 1987-05-20

著者

• HOSAKA Sumio

  Hitachi, Lid., Central Research Laboratory

• Hosaka Sumio

  Hitachi Ltd. Central Research Laboratory

• Hosaka Sumio

  Hitachi Lid. Central Research Laboratory

関連論文

• Estimation of Radiation Damage and Pattern Resolution in Ion Direct Writing Using Scattering of Low Energetic Ions
• Ar^+ -Si Sputtering in Low Temperature and High Vacuum Pressure Ranges
• High Speed Laser Beam Scanning Using an Acousto-Optical Deflector (AOD)

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