Characteristic Grooves on GaAs by Anodization
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-10-20
著者
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Masaki K
Anan Coll. Technology Tokushima
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MASAKI Kazuo
Department of Obstetrics and Gynecology, School of Medicine, Toho University
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Masaki Kazuo
Department Of Electrical Engineering Anan College Of Technology
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Masaki Kazuo
Department Of Electrical Engineering Anon College Of Technology
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MIYAMOTO Shunsuke
Department of Electrical Engineering, Anan College of Technology
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Miyamoto Shunsuke
Department Of Electrical Engineering Anan College Of Technology
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Miyamoto Shunsuke
Department Of Electrical Engineering Anon College Of Technology
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MIYAMOTO Shin-ichiro
Dept. of Physical Electronics, Tokyo Institute of Technology
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- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization
- Characteristic Grooves on GaAs by Anodization
- Tunneling Current and Surface Potential Simultaneous Measurement Using a Scanning Probe
- Frequency-Conductance Characteristic of the Sputtered Mo-n Si Schottky Barrier