Frequency-Conductance Characteristic of the Sputtered Mo-n Si Schottky Barrier

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概要

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• We have studied the frequency-conductance characteristics of the sputtered Mo-n Si Schottky barrier by using an AC small signal equivalent network. As a result, it was found that a damaged layer is formed on the Si surface and a deep level in the damaged layer acts as a trapping center for electrons. The deep level in the damaged layer is localized in the vicinity of the mid band gap and the capture cross-section is of the order of 10^-12 cm^2. The damaged layer was annealed at a temperature of 500℃ and a level like the continuous surface level is left at the Mo-Si interface.The capture cross-section of this level is of the order of 10^-16 cm^2.

• 社団法人応用物理学会の論文
• 1977-01-05

著者

• Miyamoto Shunsuke

  Department Of Electrical Engineering Anan College Of Technology

• Miyamoto Shunsuke

  Department Of Electrical Engineering Anan Technical College

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