Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization
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概要
- 論文の詳細を見る
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by C-V measurements and the thicknesses of the epi-layer agree with those obtained by C-V measurements. The technique described here enables the carrier concentration and thickness of an epi-layer such as n on an n^+ substrate to be determined simply and inexpensively.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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MASAKI Kazuo
Department of Obstetrics and Gynecology, School of Medicine, Toho University
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Masaki Kazuo
Department Of Electrical Engineering Anan College Of Technology
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MIYAMOTO Shunsuke
Department of Electrical Engineering, Anan College of Technology
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Miyamoto Shunsuke
Department Of Electrical Engineering Anan College Of Technology
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