Effect of Primary-Ion Current Density on Charge Compensation in SIMS Analysis of a Quartz Glass
スポンサーリンク
概要
- 論文の詳細を見る
In secondary ion mass spectrometry (SIMS) analysis of a quartz glass by means of negative ion bombardment, the effect of negative ion current density (J_i) has been investigated. The results show that under lower J_i (<20μA/cm^2), time is required to compensate for the surface charge and the time is inversely proportional to J_i.
- 社団法人応用物理学会の論文
- 1988-05-20
著者
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Inoue Kazuyuki
Toyota Central Research & Development Laboratories Inc
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Inoue Kazuyuki
Toyota Central Research And Development Laboratories Inc.
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ISOGAI Akio
Toyota Central Research and Development Laboratories, Inc.
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Isogai Akio
Toyota Central Research And Development Laboratories Inc.
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Isogai Akio
Toyota Central Research & Development Laboratories Inc.
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Inoue Kazuyuki
Toyota Central R&d Labs. Inc.
関連論文
- Sidewall-Less Depth Profiling with Auger Electron Spectroscopy
- Effect of Primary-Ion Current Density on Charge Compensation in SIMS Analysis of a Quartz Glass
- Application of Electron Probe Microanalysis to Heterogeneous Structure in Metals and Alloys
- Distinction of Oxygen and Sulfur in Secondary Jon Mass Spectrometry